부산대학교 도서관

We present a $\mu \text{m}$ -thin-profile power delivery solution including a charge pump with integrated passives. Targeting 1 W/mm 2 or higher power density, a 2.5-D high-density metal-insulator-metal (MIM) capacitor deposited on high aspect ratio (HAR) (up to 5) oxide studs is proposed. With approximately 25-nm-thick HfAlOx dielectric, its measured capacitance density is 25.4 nF/mm 2 for a capacitor size ranging from 1/16 mm 2 to 1 mm 2 . This shows $3.6\times $ density improvement compared with the planar MIM. Theoretically, 86 nF/mm 2 density@1.36-V bias can be obtained if a 10-nm dielectric is deposited. Moreover, the measured leakage current density is within 65 pA/mm 2 at 1-V bias (negligible for a 1 W/mm 2 -power delivery). For a backside (BS) power delivery, this 2.5-D MIM capacitor can be realized by only three BS metal layers. This enables the low-cost and thin-profile delivery system ( $\sim \!\!\mu \text{m}$ thickness), and the whole power delivery efficiency including a 1/2-ratio charge pump is $\eta \,\,=84$ %@1 W/mm 2 (>5% boost in the power efficiency).