학술논문
Hybrid 14nm FinFET - Silicon Photonics Technology for Low-Power Tb/s/mm2 Optical I/O
Document Type
Conference
Author
Rakowski, M.; Ban, Y.; De Heyn, P.; Pantano, N.; Snyder, B.; Balakrishnan, S.; Van Huylenbroeck, S.; Bogaerts, L.; Demeurisse, C.; Inoue, F.; Rebibis, K. J.; Nolmans, P.; Sun, X.; Bex, P.; Srinivasan, A.; De Coster, J.; Lardenois, S.; Miller, A.; Absil, P.; Verheyen, P.; Velenis, D.; Pantouvaki, M.; Van Campenhout, J.
Source
2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :221-222 Jun, 2018
Subject
Language
ISSN
2158-9682
Abstract
We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm 2 bandwidth density. The transmitter combines a differential FinFET driver with a Si ring modulator, enabling 40Gb/s NRZ optical modulation at 154fJ/bit dynamic power consumption in a 0.015mm 2 footprint. The receiver combines a FinFET trans-impedance amplifier (TIA) with a Ge photodiode, enabling 40Gb/s NRZ photodetection with −10.3dBm sensitivity at 75fJ/bit power consumption, in a 0.01mm 2 footprint. High-quality data transmission and reception is demonstrated in a loop-back experiment at 1330nm wavelength over standard single mode fiber (SMF) with 2dB link margin. Finally, a 4×40Gb/s, 0.1mm 2 wavelength-division multiplexing (WDM) transmitter with integrated thermal control is demonstrated, enabling Optical I/O scaling substantially beyond 100Gb/s per fiber.