학술논문
Low-resistance Ohmic contacts to digital alloys of n-AlGaN/AlN
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(1):22-24 Jan, 2006
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with HCl and buffered HF. The contact metallization consisting of a stack of Ti/Al/Ti/Au, 20/100/45/60 nm in thickness, was e-beam deposited and etch-patterned. The lowest specific contact resistance of 5.6/spl times/10/sup -5/ /spl Omega//spl middot/cm/sup 2/ was obtained after annealing in N/sub 2/ ambient at 700/spl deg/C.