학술논문
Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array
Document Type
Conference
Author
Source
2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
Subject
Language
ISSN
2158-9682
Abstract
Low voltage selectors are critical for low power operation of high density non-volatile memories. In this work, selectors based on arsenic free chalcogenide materials are demonstrated with record high endurance over 10 11 cycles together with threshold voltage ~1.3V and leakage current ~5nA. The enhanced endurance is attributed to suppression of phase separation with more stable amorphous network by proper dopants.