학술논문

A fully integrated quartz MEMS VHF TCXO
Document Type
Conference
Source
2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS), 2017 Joint Conference of the European. :68-71 Jul, 2017
Subject
Components, Circuits, Devices and Systems
Temperature measurement
Stress
Oscillators
Silicon
Micromechanical devices
Substrates
Plasma temperature
Quartz MEMS
AT-cut TCXO oscillators
Stress isolation
CMOS integration
Temperature compensation
Wafer-level vacuum packaging
Language
ISSN
2327-1949
Abstract
We report on a 32-MHz quartz TCXO fully integrated with commercial CMOS electronics and vacuum packaged at wafer level using a low-temperature MEMS-after quartz process. The novel quartz resonator design provides for stress isolation from the CMOS substrate thereby yielding classical AT-cut f/T profiles and low hysteresis which can be compensated to < ± 0.2 ppm over temperature using on-chip third-order compensation circuity. The TCXO operates at low power of 2.5 mW and can be thinned to ≤ 300 μm as part of the wafer-level eutectic encapsulation. Full integration with large SOA CMOS wafers is possible using carrier wafer techniques.