부산대학교 도서관

In this letter, a bipolar resistive switching RAM based on $ \hbox{Ni/AlO}_{y}/\hbox{n}^{+}\hbox{-}\hbox{Si}$ which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state ( $>$ 700 at 0.2 V), a high on/off resistance ratio $(> \hbox{10}^{3})$, a good retention characteristic ($> \hbox{10}^{4}\ \hbox{s}$ at 100 $^{\circ}\hbox{C}$ ), and a wide readout margin for cross-bar architecture (number of word line $N > \hbox{2}^{5}$ for worst case condition).