부산대학교 도서관

InAs–InGaAs–GaAs quantum-dot (QD) structures are extensively investigated for 1.3-$\mu\hbox{m}$ lasers with applications in low-cost metropolitan access and local area networks. For the purpose of monolithic integration, realization of QD electroabsorption modulators (EAMs) is equally important. However, there are few research efforts on InAs–InGaAs–GaAs QDs for EAMs. Furthermore, existing results either demonstrate low extinction ratio ( $< $5 dB) or multimode profile, i.e., unsuitable for practical applications. In this work, we investigated the electroabsorption characteristics of a single-mode 1.3-$\mu\hbox{m}$ InAs–InGaAs–GaAs ten-layer QD waveguide. The obtained extinction ratio of $\sim $13 dB from the single-mode QD waveguide demonstrates the feasibility of implementing QD-EAM for practical applications. We believe that our findings will be beneficial for researchers working on the monolithic integration of the QD laser and modulator.