학술논문
Photoluminescence from localized states in GaAsBi epilayers
Document Type
Conference
Author
Source
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Semiconductor Electronics (ICSE), 2014 IEEE International Conference on. :354-357 Aug, 2014
Subject
Language
Abstract
The structural and optical properties of GaAs 1−x Bi x samples with x = 0.048 and 0.06 were investigated by high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). The HR-XRD results show that both samples have a smooth and coherent GaAs 1−x Bi x /GaAs interface. The PL peak energy shows an S-shape behavior with temperature (10 K to room temperature) which is an evidence of carrier localizations. An Arrhenius analysis reveals that the thermal quenching activation energy is 30 and 19 meV for the GaAs 0.952 Bi 0.048 and GaAs 0.94 Bi 0.06 sample, respectively. It was found that the activation energy is not necessarily originated from alloy fluctuations but may also due to CuPt ordering-induced band gap fluctuations. The power dependent PL indicates that the localized energy states are continuously present and located up to 40–47 meV from the valence band.