학술논문
Low excess noise APD with detection capabilities above 2 microns
Document Type
Conference
Author
Source
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide & Related Materials (IPRM), 2010 International Conference on. :1-4 May, 2010
Subject
Language
ISSN
1092-8669
Abstract
In this work, we present the study on Separate Absorption, Charge and Multiplication (SACM) APDs utilising In 0.52 Al 0.48 As as the multiplication layer and In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 periodic heterostructures as the absorption layer. In 0.52 Al 0.48 As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared to InP. Furthermore, the type-II staggered band line-up of In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 heterostructures leads to a narrower effective bandgap of approximately 0.49 eV corresponding to the APD cut off wavelength of 2.4 μm. The SACM APD exhibited low dark current densities near breakdown. The device also exhibited multiplication in excess of 100 at 200 K. The excess noise of the APD was low as expected, and is comparable to that of a 1 μm In 0.52 Al 0.48 As PIN diode.