학술논문
Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures
Document Type
Conference
Author
Source
2007 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2007 International. :1-2 Dec, 2007
Subject
Language
Abstract
This paper has described the fabrication and demonstration of 10 kV SiC MOSFETs, with active areas of 0.15 cm 2 and 0.61 cm 2 , capable of operating at 5-10 A and 20-50 A respectively, and demonstrating excellent, stable subthreshold characteristics as a function of operating temperature (