학술논문

Gamma spectrometry of semi-insulating GaAs detectors degraded by 5 MeV electrons up to 2 MGy
Document Type
Conference
Source
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) Advanced Semiconductor Devices And Microsystems (ASDAM), 2020 13th International Conference on. :139-142 Oct, 2020
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Micromechanical devices
Spectroscopy
Semiconductor device measurement
Semiconductor devices
Gallium arsenide
Detectors
Photonics
Language
ISSN
2474-9737
Abstract
In this paper we investigate the spectrometric deterioration of semi-insulating GaAs detectors degraded by high doses of 5 MeV electrons, beyond the previously set limit of their operation ability of 1 MGy. The spectrometric characterization is made by measuring the 59.5 keV $\gamma$-rays from 241 Am, evaluating their charge collection efficiency (CCE). The accumulative dose has deteriorated the CCE of detectors, at 200 V reverse biasing, from initial 74% down to 15% at 2 MGy, independently of the dose rate in the range from 20 to 80 MGy/h. The 75% of tested detectors were able to operate with 24% CCE after 1 kGy degradation. On the other hand, only 33% of them sustain operable after next dose step of 1.25 MGy. The highest applied degradation-dose withstand operable only one detector of all twelve samples, demanding the noise subtraction to achieve the observable signal from registered photons.