부산대학교 도서관

In this paper, the important parameters of the FinFETs which includes the drain current, 1st order transconductance, gate-to-gate capacitance, cutoff frequency, gain bandwidth, energy consumption and power dissipation are thoroughly inspected by changing the gate thickness. Through several analysis with different values of gate thickness, the drain current and 1st order transconductance were found to be increasing with decrease in gate thickness. The radio frequency parameters like the cutoff frequency and the gain bandwidth provides better result for devices with lower gate thickness. As a trade off the gate-to-gate capacitance, energy consumption and power dissipation got degraded for the structures with lower gate thickness. To investigate the influence of thickness variation of the gate region, the structure analysis is processed through a standardized mathematical device simulation tool.