학술논문

Local Area Materials Processing using a Microstripline-Based Miniature Microwave Discharge
Document Type
Conference
Source
IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science Plasma Science, 2005. ICOPS '05. IEEE Conference Record - Abstracts. IEEE International Conference on. :100-100 Jun, 2005
Subject
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Nuclear Engineering
Materials processing
Microstrip
Plasma materials processing
Plasma applications
Plasma sources
Etching
Applicators
Fault location
Electron tubes
Stripline
Language
ISSN
0730-9244
Abstract
Summary form only given. Miniature discharges and their potential use for local area materials processing are investigated in this study. The objective of this study is to do materials processing steps including etching, surface activation, and plasma-assisted CVD on localized areas by applying a small discharge to only the region being processed. A miniature microwave plasma discharge applicator design based on microstripline technology is applied to create a miniature stream of plasma species. The diameter of the plasma stream considered in this study ranges from 1 millimeter down to 10's microns. The miniature microwave plasma discharge is created using 2.45 GHz microwave energy inside a 1-2 mm tube with an aperture on the end. Through this aperture the plasma stream for materials processing is formed. The microwave plasma source used in this investigation has a microstripline coupling structure with the discharge created inside 1 mm and 2 mm inner diameter quartz tubes. The microwave energy couples to the discharge via the stripline. The stripline has a characteristic impedance of 50 ohms and is connected to a microwave power supply operating at 1 watt to 100 watts. The discharge tube is orientated perpendicular to the stripline conductor. The characteristics of this discharge have been measured with electron densities in the range of 10 12 to over 10 14 cm -3 depending on the pressure, power and feed gas composition. Two materials processing applications are investigated including etching and plasma-assisted CVD. Specifically, an argon/SF 6 feed gas mixture is used to create a plasma stream with radicals for silicon etching. And, an argon/methane feed gas mixture is used to create a plasma stream for amorphous carbon deposition. A CAD-guided automated path generation system is developed to assist manufacturing micro-structures/patterns automatically using the micro plasma applicator. Based on the CAD model of a micro-str