학술논문

Performance of Photoconductive Receivers at 1030 nm Excited by High Average Power THz Pulses
Document Type
Periodical
Source
IEEE Transactions on Terahertz Science and Technology IEEE Trans. THz Sci. Technol. Terahertz Science and Technology, IEEE Transactions on. 14(2):139-151 Mar, 2024
Subject
Fields, Waves and Electromagnetics
Floors
Power lasers
Signal to noise ratio
Time measurement
Bandwidth
Power measurement
Probes
Dynamic range
lithium niobate
optical rectification
photoconductive receiver
THz-time domain spectroscopy (THz-TDS)
Language
ISSN
2156-342X
2156-3446
Abstract
In the last few years, many advances have been made in the demonstration of high-average power pulsed THz sources; however, little effort has been made to study compatible sensitive field-resolved detectors. Here, we investigate ErAs:InAlGaAs photoconductive receivers optimized for a probe wavelength of 1030 nm and thus suitable for the new class of high-power ultrafast Ytterbium-based laser sources for THz generation and detection. The performance of the receiver is tested with a few-cycle THz source with high average power up to 20 mW and the dynamic range and saturation behavior of the receiver is thoroughly characterized. Under optimized settings, a dynamic range of more than 115 dB is reached in a 120 s measurement time with 20 mW of THz average power, which is among the highest reported values to date. By reviewing the state-of-the art in time domain spectroscopy measurement and postprocessing technology, we identify current limitations and guidelines for further increasing the dynamic range toward 150 dB in short measurement times using high average power THz systems with sensitive photoconductive receivers.