부산대학교 도서관

In this part, we present a new charge-based symmetric compact model of partially depleted silicon-on-insulator (PDSOI) technology. The model’s core charge calculations are based on the industry-standard Berkeley short-channel IGFET model (BSIM)-BULK platform and fully utilize its speed, robustness, and symmetry properties. Further, the SOI-specific effects (namely, impact ionization, body leakage currents, junction leakage, etc.) are integrated from the industry-standard legacy BSIM-SOI model. The model can accurately capture the floating body effect, which is crucial for PDSOI technology. The linear and nonlinear body contact (BC) models have also been implemented for BC PDSOI devices. The model passes source–drain symmetry tests for both dc and small-signal simulations, resulting in excellent harmonic balance characteristics, critical for RF applications. The model is validated with the state-of-the-art PDSOI device data from the industry.