학술논문
Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed
Document Type
Conference
Author
Source
2021 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2021 IEEE International. :1-4 May, 2021
Subject
Language
ISSN
2573-7503
Abstract
We developed 16 Mb 1T1R NRAM integrating CNTs resistor elements into the intermediate wirings of 55 nm CMOS. Excellent reliabilities were proven by the retention test at 150 °C extrapolated for 100 kh and the endurance test of 1E6 cycles. The switching speed was realized for cell array at 200 ns. In addition, we successfully fabricated CNTs resistor elements with 49% shrunk small via pitch cell area and realized advantageous high switching speed with 0.5 ns single pulse even omitting verify operation.