부산대학교 도서관

This paper presents a comparative and analytical study on the basis of analog performances of an Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT with gate oxide and an U-DG AlGaN/GaN Schottky-HEMT. The study has been conducted based on the effect on the conduction band energy profile and also on the basic Analog Figure of Merits (FoMs) like Drain current (I d ), Transconductance (g m ), Output Resistance (r o ), Intrinsic Gain (g m r o ). It has been observed that though Schottky-HEMTs have higher transconductance and faster switching transients, MOS-HEMTs are advantageous over the former as the latter experiences higher drive current capacity, lower threshold voltage, better I on /I off ratio and greater peak intrinsic gain.