부산대학교 도서관

In this paper, the behaviour of a Double-Gate symmetric Underlapped heterojunction-based InAlGaN/GaN MOS-HEMT device, using Hafnium Oxide to serve as the high-k dielectric Gate material, on the basis of analog and RF factors have been analysed from a comparison viewpoint between separate GaN and InAlGaN layer thickness variation. Studies were conducted by diversifying GaN layer and InAlGaN layer thickness individually for multiple ratios while holding the other constant. Drain current ($\mathrm{I}_{\mathrm{d}}$), output resistance (r 0 ), transconductance ($\mathrm{g}_{\mathrm{m}}$), transconductance generation factor ($\mathrm{g}_{\mathrm{m}}$/$\mathrm{I}_{\mathrm{d}}$) along with different RF figure of merits (FOMs), have all been taken into consideration when evaluating the device performance. Studies show that varying InAlGaN width to increase the GaN width to InAlGaN width ratio is a more efficient method as analog parameters like $\mathrm{g}_{\mathrm{m}}$ and $\mathrm{g}_{\mathrm{m}}$/$\mathrm{I}_{\mathrm{d}}$ give 29.3% and 18.5% improvement for InAlGaN variation and also this method show ameliorated differences in RF performance.