학술논문
Numerical simulation of the NiO as hole transport layer in CH3NH3PbBr3 perovskite based-solar cell using SCAPS-1D
Document Type
Conference
Source
2022 2nd International Conference on Innovative Research in Applied Science, Engineering and Technology (IRASET) Innovative Research in Applied Science, Engineering and Technology (IRASET), 2022 2nd International Conference on. :1-7 Mar, 2022
Subject
Language
Abstract
With the SCAPS-1D simulator, a full digital simulation and modeling on the perovskite solar cell was performed using the perovskite methylammonium lead tribromide material MAPbBr 3 for various parameters such as open circuit voltage (V oc ), fill factor (FF), power conversion efficiency (PCE) and short-circuit current density (J sc ). The electronic properties of the MAPbBr 3 material used as the active layer were calculated. The effects of NiO layer concentration, MAPbBr 3 layer thickness and temperature on photovoltaic parameters on perovskite solar cell (n-ITO/ n-PCBM (ETL)/ p-MAPbBr 3 /p-NiO (HTL)) were examined. The simulation of the solar cell based on perovskite MAPbBr 3 allowed us to find the following values $(\mathrm{V}_{\text{oc}}=1.0476\ \mathrm{V},\ \mathrm{J}_{\text{sc}}=7.9745\ \text{mA}/\text{cm}^{2},\ \text{FF}= 77.85\%,\ \text{PCE}=6.5\%$). Our results were compared with published experimental values and also simulated by SCAPS-1D, and they showed good agreement.