학술논문
Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation
Document Type
Conference
Author
Source
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on. :369-372 Sep, 2017
Subject
Language
ISSN
1946-1569
1946-1577
1946-1577
Abstract
The aim of this study is to illustrate the efficiency of TCAD for simulating RF devices in advanced technology nodes and identify optimization paths. A strategy involving 3D simulation and a multilayered description of the resistive gate is proposed, followed by a calibration step of the TCAD setup against measurements. Then, various effects impacting the values of the Ft/Fmax RF figures of merit are assessed. At last, thanks to combination of TCAD with Design of Experiments, the sensitivity analysis of the most influent process parameters as well as their interactions is performed.