학술논문

Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al2O3-mask
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 13(5):406-408 May, 2001
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Semiconductor lasers
Mirrors
Waveguide lasers
Photonic crystals
Semiconductor waveguides
Two dimensional displays
Dry etching
Electron beams
Lithography
Threshold current
Language
ISSN
1041-1135
1941-0174
Abstract
We have fabricated and investigated AlGaAs-InGaAs-based ridge waveguide (RWG) lasers with two-dimensional (2-D) triangular photonic crystal (PC) mirrors using a wet-oxidized Al/sub 2/O/sub 3/ mask for the dry etching of the PC at one end of the ridge. The laser structure includes a 60-nm-thick AlAs layer positioned in the upper cladding, which is converted into Al/sub 2/O/sub 3/ after the definition of the PC by electron beam lithography and shallow etching. Etching of the holes is then continued using the Al/sub 2/O/sub 3/ mask, to a final depth of 600 nm. The continuous-wave characteristics of the lasers show a clear dependence on the period of the PC including a significant decrease of the threshold current and an increase of the efficiency for properly adjusted crystal parameters.