학술논문
4.5kV SiC MOSFET with boron doped gate dielectric
Document Type
Conference
Author
Source
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. :283-286 Jun, 2016
Subject
Language
ISSN
1946-0201
Abstract
A new process based on Boron diffusion step to improve the SiO2/SiC interface quality is presented in this work. Surprisingly, Boron, a p-type dopant and small size atom, generates similar apparent improvements as previous oxide treatments based on large size atoms, n-type or deep levels dopants. This process has been applied to a thermal oxide grown to fabricate large area (up to 25mm2) 4.5kV 4H-SiC VDMOS. Fabricated devices show a significant improvement in terms of channel effective mobility, on-resistance, and 3rd quadrant behavior in comparison with counterparts without Boron oxide treatment.