학술논문

Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate
Document Type
Periodical
Source
IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 24(8):12466-12471 Apr, 2024
Subject
Signal Processing and Analysis
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Robotics and Control Systems
Detectors
Voltage measurement
Current measurement
Temperature measurement
Photoconductivity
Monitoring
Sensor phenomena and characterization
Flexible detectors
hydrogenated amorphous silicon (a-Si:H) detectors
radiation detectors
Language
ISSN
1530-437X
1558-1748
2379-9153
Abstract
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates such as polyimide (PI). For these properties, a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (X-ray, electron, gamma ray, and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events), and neutron flux measurements. In this article, we have studied the dosimetric X-ray response of n-i-p diodes deposited on PI. We measured the linearity of the photocurrent response to X-rays versus dose rate from which we have extracted the dosimetric X-ray sensitivity at various bias voltages. In particular, low bias voltage operation has been studied to assess the high energy efficiency of these kinds of sensors. A measurement of stability of X-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.