학술논문

Variable Gain Differential Low Noise Power Amplifier in 28-nm FD-SOI
Document Type
Conference
Source
2019 31st International Conference on Microelectronics (ICM) Microelectronics (ICM), 2019 31st International Conference on. :206-209 Dec, 2019
Subject
Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Gain
Power amplifiers
Transistors
Power generation
Noise figure
Differential amplifiers
LNPA: Low Noise Power Amplifies
UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator
$P_{1-dB}$: 1 dB compression point
VBB: Bodv Bias Voltage
NF: Noise Figure
PAE: Power Added Efficiency
$P_{sat}$: Saturated output power
Language
Abstract
The paper shows a design of mm-wave low noise power amplifier LNPA. The amplifier has the function of LNA in addition to power amplifier PA. It generates large output power taking into account the low noise figure of the amplifier stage. A variable and controlled power gain of 10 dB is designed in the STM 28-nm FD-SOI technology at the candidate of the 5G frequency 25 GHz. The post layout simulation of a $\mathbf{522x220}\ \mu \mathbf{m}^{2}$ layout area shows a 2.8 dB noise figure, 13.7 dBm saturated output power and 34.8% PAE using differential amplifier topology.