학술논문
New Extraction Method for Intrinsic Qrr of Power MOSFETs
Document Type
Conference
Author
Source
2023 35th International Conference on Microelectronic Test Structure (ICMTS) Microelectronic Test Structure (ICMTS), 2023 35th International Conference on. :1-4 Mar, 2023
Subject
Language
ISSN
2158-1029
Abstract
We provide the method to estimate intrinsic Q rr ($Q_{r_{-}\text{int}})$ without parasitic inductance in the measurement system for the first time. In this paper, we analyze parasitic inductance dependence of Q rr by TCAD simulation and we propose the method for removing the parasitic inductance effect as well as calculating the carrier of recombination and discharge (qr_into).