학술논문
Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE
Document Type
Conference
Author
Source
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019 IEEE. :1-3 Nov, 2019
Subject
Language
Abstract
We report the development of high efficiency Ka-band (33 GHz – 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL’s T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gain of 11.9 dB and associated output power of 24.4 dBm measured at a frequency of 34 GHz in continuous wave (CW) mode. The exceptionally high efficiency of reported MMICs is a result of outstanding device characteristics of highly scaled GaN HEMTs.