학술논문

IDeF-X HDBD: Low-Noise ASIC for Imaging Spectroscopy With Semiconductor Detectors in Space Science Applications
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):620-626 Mar, 2022
Subject
Nuclear Engineering
Bioengineering
Detectors
Transistors
Thermal noise
Silicon
X-ray imaging
Space vehicles
MOS devices
ASIC
bipolarity
CSA
ENC
imaging spectroscopy
low noise
silicon drift detector
space application
X-rays
Language
ISSN
0018-9499
1558-1578
Abstract
We present the IDeF-X HDBD integrated circuit, our latest 32-channel application specified integrated circuit devoted to semiconductor photon counting X-ray detectors, designed to read charges ranging from −40 to 40 fC. The chip reaches an equivalent noise charge (ENC) floor of 17 electrons rms and is optimized for low input capacitance (< 10 pF). Each channel is based on an optimized charge sensitive amplifier (CSA) followed by a CR-RC 2 filter and a peak detector with a power consumption of $850 ~\mu \text{W}$ /channel. Gain and shaping times are tunable. This circuit has been designed with radiation mitigation techniques to meet space application requirements. This ASIC can read either cadmium telluride or silicon detectors for imaging-spectroscopy applications. An energy resolution of 230-eV FHWM at 6 keV and a low-level threshold of 1.2 keV were demonstrated with a single pixel silicon drift detector connected to one channel.