학술논문

Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 35(1):101-107 Jan, 1988
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Mercury (metals)
Optical noise
Tellurium
Avalanche photodiodes
Photonic band gap
Manufacturing
Lead
Signal to noise ratio
Charge carrier processes
Ionization
Language
ISSN
0018-9383
1557-9646
Abstract
The authors describe the electrical and optical characterization of three Hg/sub 1-x/Cd/sub x/Te avalanche photodiodes manufactured using planar technology with composition parameter x near 0.6. This alloy composition leads to devices that are well suited for 1.55- mu m detection. From the noise analysis under multiplication, the authors show the tight dependence of the ratio beta / alpha (of the hole; and electron ionization coefficient, respectively) upon x and the ratio Delta /E/sub g/ where Delta is the spin-orbit splitting energy and E/sub g/ is the bandgap energy. It turns out that in these alloys around x=0.6, Delta is very close to the bandgap energy so beta / alpha reaches its maximum value. Owing to this property, which is characteristic of II-VI compounds, Hg/sub 1-x/Cd/sub x/Te is a good candidate for 1.3- mu m to 1.6- mu m avalanche photodiodes.ETX