학술논문
Metal-semiconductor-metal demultiplexing waveguide photodetectors in InGaAs/GaAs quantum well structures by selective bandgap tuning
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 3(9):817-820 Sep, 1991
Subject
Language
ISSN
1041-1135
1941-0174
1941-0174
Abstract
A two-wavelength demultiplexing metal-semiconductor-metal (MSM) waveguide photodetector has been fabricated using impurity-free vacancy diffusion and partial intermixing of an InGaAs/GaAs strained layer quantum well structure. The importance of growth and process parameters, such as aluminium composition in the cladding layer and the oxygen plasma treatment of the sample during processing, on the related device performance is discussed. This photodetector is a potential candidate for monolithic integration with other optoelectronic devices.ETX