학술논문

High Density Static RAM for In-Situ Bulk Data Storage
Document Type
Conference
Author
Source
OCEANS '86. :444-447 1986
Subject
Geoscience
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Transportation
Signal Processing and Analysis
Random access memory
Logic devices
Printed circuits
Energy consumption
Read-write memory
Electronics packaging
Manufacturing
Power dissipation
Pins
Decoding
Language
Abstract
Static CMOS Random Access Memory (RAM) can be packaged to achieve a density of 1 MByte per running inch of 6" I.D. pressure case, using 64 kbit memory devices. A bulk data storage subsystem using this technique, including 1 MByte/sec CPU interface, backup power system, and memory array of up to 16 MBytes, was constructed and tested in an operational microstructure profiler. Results are discussed, and the general advantages and disadvantages of this data storage method are considered.

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