학술논문
Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
Document Type
Conference
Author
Source
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2019 19th European Conference on. :1-4 Sep, 2019
Subject
Language
ISSN
1609-0438
Abstract
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.