학술논문
Post-deposition annealing of thin film CuInS/sub 2/ made from a single-source precursor
Document Type
Conference
Author
Source
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005. Photovoltaic Specialists Conference Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE. :382-385 2005
Subject
Language
ISSN
0160-8371
Abstract
Analysis of the radiative recombination processes in CuInS/sub 2/ thin films deposited using a single-source precursor was made. The photoluminescence spectrum is dominated by donor-acceptor transitions and post-deposition annealing under sulfur gas quenched the transitions associated with sulfur vacancy indicating extra sulfur was incorporated into the films passivating the vacancies. In addition, a part of the broad emission band (between 1.24 eV and 1.32 eV) was lowered by S-annealing. Ar-annealing without sulfur also improved crystallinity of the films - X-ray diffraction showed diffraction peaks as sharp as those from S-annealing. However, the emission related to the deep defects was not reduced and the creation of sulfur vacancies increased the emission bands at 1.45 eV and 1.32 eV.