학술논문
Characterization of deposition parameters in aerosol assisted chemical vapor deposition of CuInS/sub 2/ from a single-source precursor
Document Type
Conference
Source
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005. Photovoltaic Specialists Conference Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE. :375-377 2005
Subject
Language
ISSN
0160-8371
Abstract
Alloys of Cu(In:Ga)(S:Se)/sub 2/ have shown high potential as thin film photovoltaic absorbers due to their high absorption coefficients, near ideal band gaps, and good electrical properties. Efforts have been lead to create easily decomposing organometallic single-source precursors (SSP) to produce films at temperatures below 400/spl deg/C. Along with that, the SSP (PPh/sub 3/)/sub 2/Cu(SEt)/sub 2/In(SEt)/sub 2 /has been shown to deposit CuInS/sub 2/ films with good optical, morphological, and electrical properties via aerosol-assisted chemical vapor deposition (AACVD). Presented here are studies aimed to understand how certain deposition parameters can be used to optimize the AACVD process. Parameters included in this study are temperature of the deposition zone, substrate location within the reactor, and concentration of the SSP in solution. Deposition control has produced films with four distinct morphologies, varying in density, adhesion, smoothness, and color.