학술논문
Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 47(5):1052-1060 May, 2000
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub 2//Si structure and an Al/SiO/sub 2//n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.