학술논문
Integration of copper with low-k dielectrics for 0.13 /spl mu/m technology
Document Type
Conference
Author
Source
Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Physical and failure analysis of integrated circuits Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the. :111-117 2002
Subject
Language
Abstract
The integration of Cu with low-k dielectrics poses a number of challenges. In this paper, we describe yield issues associated with integration of three different low-k dielectrics; FSG (fluorosilicate glass), OSG (organosilicate glass), and polymers. Process issues that are discussed include patterning of the dielectrics, cleaning of the Cu surface, and Cu polishing.