학술논문

Comparison of X-ray GaAs and CdTe p-i-n detectors by a 3D FEM model
Document Type
Conference
Source
IEEE Nuclear Science Symposium Conference Record, 2005 Nuclear Science Symposium Nuclear Science Symposium Conference Record, 2005 IEEE. 2:740-745 2005
Subject
Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Gallium arsenide
PIN photodiodes
X-ray detection
X-ray detectors
Temperature
Electron traps
Semiconductor materials
Space charge
Image sensors
Energy resolution
Language
ISSN
1082-3654
Abstract
In this paper a 3D FEM model is used to simulate the temperature behaviour of X-ray GaAs and CdTe p-i-n detectors. The good accordance of the obtained values with the know experimental data confirms the general validity of the adopted model in simulating devices of any material, at any working temperature. Moreover the comparison shows that GaAs detectors having the same dimension than CdTe detectors and for the same energy source (/sup 241/Am with 60 KeV) exhibit the same efficiency at 243 K while, at room temperature (300 K) their behaviour is far better.