학술논문
Mathematical model of shaping of a ultrathin SiO/sub 2/ layer at a high-temperature oxidation of silicon
Document Type
Conference
Source
2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) Electron devices and solid-state circuits Electron Devices and Solid-State Circuits, 2003 IEEE Conference on. :365-368 2003
Subject
Language
Abstract
On the grounds of beliefs about polymeric structure of a ultrathin silicon dioxide layer obtained by a rapid thermal oxidation (RTO) in a temperature range 950-115/spl deg/C, the model of structure of a boundary layer in a system Si/SiO/sub 2/ is offered. The semiquantitative analysis of a spatial distribution of polymetric compounds of different length in a boundary layer is carried out. The outcomes of model operation indirectly prove to be true by known experimental datas.