학술논문
Island growth and phase separation in strained InAs/sub 1-x/P/sub x//InP heterostructures
Document Type
Conference
Author
Source
Seventh International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on. :206-209 1995
Subject
Language
Abstract
Using x-ray diffraction and transmission electron microscopy we have found that InAs/sub 1-x/P/sub x/ films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual phase-separated island growth mode related to strain. Initially, pseudomorphic islands of intermediate composition form and grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate.