학술논문

A 4–32 Gb/s Bidirectional Link With 3-Tap FFE/6-Tap DFE and Collaborative CDR in 22 nm CMOS
Document Type
Periodical
Source
IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 49(12):3079-3090 Dec, 2014
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Clocks
Decision feedback equalizers
Phase detection
Collaboration
CMOS integrated circuits
Timing
Receivers
Active inductor CTLE
bidirectional link
collaborative CDR
conditional phase detection
decision-feedback equalizer (DFE)
phase error decimation
regulated CMOS clocking
source-series terminated (SST) driver
Language
ISSN
0018-9200
1558-173X
Abstract
This paper details the design of an 8-lane bidirectional link for both within-the-box and external communications in 22 nm CMOS technology. A low profile connector with a high density cable assembly ensure a data rate of up to 32 Gb/s per lane while maintaining channel loss below 25 dB. Channel equalization is performed by a combination of a 3-tap feed-forward equalizer (FFE), single-stage continuous-time linear equalizer (CTLE) and a 6-tap decision-feedback equalizer (DFE). Collaborative timing recovery is used to enable lane characterization without degrading jitter performance. Phase error decimation, with a conditional phase detection scheme, is used to reduce the DFE complexity by 50%. Power consumption over a wide range of data rates from 4 to 32 Gb/s is reduced by using regulated CMOS clocking with lane bundling, low swing transmitter with a source-series terminated (SST) driver and a highly reconfigurable receiver with an active inductor CTLE. At a lane data rate of 32 Gb/s, over a 0.5 m cable with 16 dB of loss, a transceiver lane consumes 205 mW from a 1.07 V supply. The power scales down to 26 mW from a 0.72 V supply at 8 Gb/s, when transmitting over a channel with 8 dB loss. The active silicon area per lane is 0.079 mm$^{2}$ .