학술논문

Storage element scaling impact on CNT memory retention and ON/OFF window
Document Type
Conference
Source
2014 IEEE 6th International Memory Workshop (IMW) Memory Workshop (IMW), 2014 IEEE 6th International. :1-3 May, 2014
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Carbon nanotubes
Resistance
Random access memory
Electrodes
Nonvolatile memory
Standards
Reliability
Carbon Nanotubes
CNT
NRAM
RRAM
NVM
Language
ISSN
2159-483X
2159-4864
Abstract
CNT (Carbon Nanotube) based memory (NRAM) demonstrates a beneficial scaling effect related to the patterned area of the CNT region, such that the scaled feature shows an improvement in ON/OFF resistance ratio (to ~10,000x and improved data retention relative to the original feature dimensions.