학술논문

Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr/sub 2/Se/sub 4//AlGaAs/GaAs
Document Type
Conference
Source
Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401) INTERMAG Magnetics Conference, 2003. INTERMAG 2003. IEEE International. :CT-07 2003
Subject
Fields, Waves and Electromagnetics
Spin polarized transport
Gallium arsenide
Electroluminescence
Light emitting diodes
Polarization
Language
Abstract
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr/sub 2/Se/sub 4/-AlGaAs-GaAs are studied. Epitaxially grown CdCr/sub 2/Se/sub 4/ films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown.