부산대학교 도서관

In this article, we report the first experimental investigation of the behavior of the 3-D NAND Flash memory technology in the deep-cryogenic regime (temperature ${T} < {50}$ K). Clear evidence is provided to demonstrate that, in that ${T}$ regime, the reduction of the Read bitline voltage gives rise to a paradigm shift in the current–voltage characteristics of the memory cells, consisting of the appearance of single-electron transistor (SET)-like conduction schemes. The phenomenon is traced back to nonuniformities in the electrostatic inversion of cell channel, producing, at that deep-cryogenic ${T}$ , a landscape of conductive quantum dots separated by energy barriers where electron transport is affected by Coulomb blockade. The results represent a first step toward innovative applications of 3-D NAND Flash memories.