학술논문

Effects of structure parameters on time response and power-current characteristics of InGaN/GaN single quantum well laser by solving rate equations
Document Type
Conference
Source
2012 International Conference on Enabling Science and Nanotechnology Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on. :1-2 Jan, 2012
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Mathematical model
Laser modes
Equations
Power lasers
Analytical models
Software
Semiconductor lasers
quantum well laser
rate equations
InGaN/GaN
Delphi
fourth-order Runge-kutta method
Language
Abstract
There are several equation sets that are used to characterize of the performance parameters of a quantum well (QW) lasers. One of simple and important equations groups which are used to study of laser characteristics in the almost powerful and expensive simulation tools such as Crosslight, ISE TCAD and SILVACO is of rate equations. A numerical analysis of rate equations is a powerful tool to study of carriers and photons behavior in the semiconductor lasers. The differential rate equations are used to estimate simulated and spontaneous emissions of laser in the all semiconductor simulation softwares [1–7]. A new visual and analytical model to study effects of structure parameters on laser performance of InGaN single quantum well lasers based on solving rate equations by using user friendly programming software, Delphi, is presented. This model has provided a graphical user interface (GUI) for researchers by which one can work directly with all laser parameters throughout the simulation work and analysis without the need to access source code[1]. We have investigated effects of different parameters such as quantum well thickness, separate confinement heterostructure (SCH) thickness and cavity length on the principle characteristics of the laser which include laser time response (P-t), and output power-current (P-I) characteristics. Meanwhile related features such as turn-on delay time of lasing, threshold current and slope efficiency have been investigated. Figure 2 shows the graphical user interface (GUI) of the main program, which uses to input parameters such as QW and SCH thickness and etc. Simulation results of P-I characteristics of InGaN SQW laser with our software has shown in figure 2. Also figure 3 shows the P-t characteristics of the simulated InGaN SQW laser. In conclusion, the presented work demonstrates a new visual, open source and analytical model based on solving rate equations by user friendly Delphi programming software. Our model in comparison with other analytical software and expensive simulators provides directly access to the parameters of lasers throughout the simulation and analysis