학술논문
(110) channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (Rext) engineering
Document Type
Conference
Author
Yang, B.; Waite, A.; Yin, H.; Yu, J.; Black, L.; Chidambarrao, D.; Domenicucci, A.; Wang, X.; Ku, S. H.; Wang, Y.; Meer, H. V.; Kim, B.; Nayfeh, H.; Kim, S.D.; Tabakman, K.; Pal, R.; Nummy, K.; Greene, B.; Fisher, P.; Liu, J.; Liang, Q.; Holt, J.; Narasimha, S.; Luo, Z.; Utomo, H.; Chen, X.; Park, D.; Sung, C.Y.; Wachnik, R.; Freeman, G.; Schepis, D.; Maciejewski, E.; Khare, M.; Leobandung, E.; Luning, S.; Agnello, P.
Source
2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :1032-1034 Dec, 2007
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
This paper presents for the first time (110) PMOS characteristics without R ext degradation, allowing investigation of fundamental mobility and demonstration of drive current I on in excess of 1mA/mum at I off =100 nA/μm.