학술논문

Characterization of Silicon Photomultipliers for nEXO
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 62(4):1825-1836 Aug, 2015
Subject
Nuclear Engineering
Bioengineering
Detectors
Xenon
Temperature measurement
Photodetectors
Noise
Liquids
Uncertainty
silicon photomultipliers
xenon detectors
Language
ISSN
0018-9499
1558-1578
Abstract
Silicon Photomultipliers (SiPMs) are attractive candidates for light detectors for next generation liquid xenon double-beta decay experiments, like nEXO (next Enriched Xenon Observatory). In this paper we discuss the requirements that the SiPMs must satisfy in order to be suitable for nEXO and similar experiments, describe the two test setups operated by the nEXO collaboration, and present the results of characterization of SiPMs from several vendors. In particular, we find that the photon detection efficiency at the peak of xenon scintillation light emission (175-178 nm) approaches the nEXO requirements for tested FBK and Hamamatsu devices. Additionally, the nEXO collaboration performed radio-assay of several grams of bare FBK devices using neutron activation analysis, indicating levels of $^{40}{\rm K}$, $^{232}{\rm Th}$ , and $^{238}{\rm U}$ of the order of $ < 0.15$, ($ 6.9\cdot 10^{ - 4} - 1.3 \cdot 10^{ - 2}$), and $ < 0.11 ~\hbox{mBq}/\hbox{kg}$, respectively.