학술논문

A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Document Type
Conference
Source
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :489-492 2005
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Leakage current
MOSFETs
Tunneling
High-K gate dielectrics
Calculus
Wave functions
Capacitance
Electrodes
Electrons
Resonance
Language
ISSN
1930-8876
2378-6558
Abstract
This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical form of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.