학술논문

Resolution studies of double-sided silicon microstrip detectors in a high energy beam
Document Type
Conference
Source
IEEE Conference on Nuclear Science Symposium and Medical Imaging Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE. :213-215 vol.1 1992
Subject
Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
Bioengineering
Silicon
Detectors
Spatial resolution
Semiconductor device testing
Performance evaluation
Strips
Sensor arrays
Microstrip antenna arrays
Semiconductor device manufacture
Very large scale integration
Language
Abstract
Tracking tests of arrays of silicon microstrip detectors manufactured by Micron Semiconductor Ltd., and Hamamatsu, Inc. with VLSI readout have been performed in a high-energy test beam at Fermilab. Of particular interest were charge sharing studies and spatial resolution as a function of angle of incidence. Separate tests were performed for different strip pitch configurations including 25- mu pitch with every strip read-out and 25- mu pitch with every other strip read-out. Readout was accomplished with the Berkeley SVXD IC/SRS/SDA sequencer system. Of special interest are the establishment of sub-3- mu resolution on a 25- mu pitch. Ohmic side and diode side resolutions perpendicular to the beam direction ranging from 2.9 mu at normal incidence to about 10 mu at 45-degree incident angle.ETX