학술논문
Improving Drain-Induced Barrier Lowering Effect and Hot Carrier Reliability With Terminal via Structure on Half-Corbino Organic Thin-Film Transistors
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(4):569-572 Apr, 2022
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
This study proposes a terminal via structure for half-Corbino organic thin-film transistors (OTFTs) to improve drain-induced barrier lowering (DIBL) effect and reliability. A sub-channel conduction and DIBL phenomenon due to high drain voltages are observed on the $\text{I}_{{\text {D}}} - \text{V}_{{\text {G}}}$ curves of traditional half-Corbino OTFTs. The device breaks down at a drain voltage of −40 V. This is attributed to the strong electric field between the source/drain corner edge, which is verified by a COMSOL electric field simulation. The degradation behavior is inhibited through the terminal via structure. In addition, the terminal via structure reduces the on-current degradation by dispersing heat near the corner edge after the hot carrier effect.