부산대학교 도서관

In this paper, we propose a low power wideband CMOS low noise amplifier (LNA) at V-band. This work is the first time using the double-transformer-coupling technique to achieve a wideband design. The major difference between proposed and traditional wideband LNA is the use of double-transformer-coupling technique and T-type matching method to control the upper/lower 3-dB frequencies. In addition, the combination of double transformer and current re-used technique not only can save dc power and die area but also can implement the g m -boost technique to improve the overall transconductance. The peak gain of LNA is 21.6 dB and has a fractional 3-dB bandwidth of 35.2 % which is from 46.5 to 65.8 GHz. Across-frequency ranges from 50 to 66 GHz, the measured the N.F., IP1dB, and IIP3 are better than 7.28 dB, -21.6 dBm and -13.16 dBm, respectively. The total dc power consumption is only 16.3 mW for 1.2 V supply voltage. To our best knowledge, this LNA has the wider fractional bandwidth, lower dc power, more compact die area and excellent FoM at V-band among CMOS LNAs.