부산대학교 도서관

We perform electroluminescence (EL) intensity analysis on large-area monolithically-integrated Cu(In,Ga)Se 2 (CIGS) modules. EL was measured in two modes: a fixed voltage near V MP , and a fixed current injection near I MP . The EL intensity was integrated across the image to give quantitative values EL V and EL I , respectively. Differences in EL V between different modules reflect differences in average neutral bulk electronic properties (parameterized by carrier diffusion length L D ), while EL I is related to both neutral bulk and Space Charge Region (SCR) collection (dependent on both L D and non-radiative recombination lifetime parameter τ). Significant differences in EL intensity are observed between modules made with different precursor structures. By conducting large-area EL intensity analysis, we have demonstrated a method for decoupling and comparing neutral bulk and SCR collection properties of the absorbers in large-area monolithically integrated CIGS modules.